Fast and slow transient charging in various III-V field-effect transistors with atomic- layer-deposited-Al2O3 gate dielectric
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چکیده
منابع مشابه
Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics
We demonstrate III–V compound semiconductor (GaAs, InGaAs, and GaN) based metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al2O3 high-permittivity (high-k) gate dielectric, deposited by atomic layer deposition (ALD). These MOSFET devices exhibit extremely low gate-leakage current, high transconductance, high dielectric breakdown strength, a high s...
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We report on a GaN metal-oxide-semiconductor field-effect-transistor (MOSFET) using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric. Compared to a GaN metal-semiconductor field-effect-transistor (MESFET) of similar design, the MOSFET exhibits several orders of magnitude lower gate leakage and near three times higher channel current. This implies that the ALD Al2O3/GaN interface is of ...
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